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PDTC114E - 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆,R2=10千欧 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?

PDTC114E_4610444.PDF Datasheet

 
Part No. PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU PDTC114EE115 PDTC114ES PDTC114EEFT/R PDTC114EK-T
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆,R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?

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 Full text search : 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆,R2=10千欧 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?


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